[B-3-2] Physical and Electrical Design of FinFET based SRAM Bitcell for 22nm Node and Below

S. C. Song¹, M. Abu-Rahma¹, B. M. Han¹, S. S. Yoon¹, J. Wang¹, W. Yang², C. Hu², G. Yeap¹ (1.Qualcomm Inc., 2.Univ. of California Berkeley, USA)

https://doi.org/10.7567/SSDM.2008.B-3-2