Gate-All-Around 4-nm Silicon Nanowire Schottky Barrier MOSFET with 1-D NiSi Source/Drain

J. W. Peng; S. J. Lee; G. C. Albert Liang; N. Singh; C. M. Ng; G. Q. Lo; D. L. Kwong

doi:https://doi.org/10.7567/SSDM.2008.B-3-3

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-3-3] Gate-All-Around 4-nm Silicon Nanowire Schottky Barrier MOSFET with 1-D NiSi Source/Drain

J. W. Peng^1,2,3、S. J. Lee²、G. C. Albert Liang²、N. Singh¹、C. M. Ng³、G. Q. Lo¹、D. L. Kwong¹ (1.Inst. of Microelectronics、2.National Univ. of Singapore、3.Chartered Semiconductor Manufacturing Ltd., Singapore)

https://doi.org/10.7567/SSDM.2008.B-3-3

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