Erbium/Platinum Silicided Gate-All-Around Silicon Nanowire Schottky Source/Drain MOSFETs

E. J. Tan; K. L. Pey; N. Singh; G. Q. Lo; D. Z. Chi; Y. K. Chin; L. J. Tang

doi:https://doi.org/10.7567/SSDM.2008.B-3-4

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-3-4] Erbium/Platinum Silicided Gate-All-Around Silicon Nanowire Schottky Source/Drain MOSFETs

E. J. Tan^1,2,3, K. L. Pey¹, N. Singh², G. Q. Lo², D. Z. Chi³, Y. K. Chin¹, L. J. Tang² (1.Nanyang Technological Univ., 2.Inst. of Microelectronics, 3.Inst. of Materials Res. and Eng., Singapore)

https://doi.org/10.7567/SSDM.2008.B-3-4

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