Principal Guideline of Stress Design Engineering for Drivability Enhancement and Suppression of Variability in PMOSFET with SiGe S/D

M. Nishikawa; N. Tamura; Y. Shimamune; A. Hatada; K. Ikeda; T. Yamamoto; T. Miyashita; Y. S. Kim; T. Kubo; T. Sukegawa; M. Fukuda; K. Sukegawa; H. Kurata; M. Kase; K. Hashimoto

doi:https://doi.org/10.7567/SSDM.2008.B-3-5L

[B-3-5L] Principal Guideline of Stress Design Engineering for Drivability Enhancement and Suppression of Variability in PMOSFET with SiGe S/D

M. Nishikawa¹、N. Tamura²、Y. Shimamune²、A. Hatada¹、K. Ikeda²、T. Yamamoto²、T. Miyashita²、Y. S. Kim²、T. Kubo¹、T. Sukegawa¹、M. Fukuda¹、K. Sukegawa²、H. Kurata²、M. Kase¹、K. Hashimoto¹ (1.Fujitsu Microelectronics Ltd.、2.Fujitsu Labs. Ltd., Japan)

https://doi.org/10.7567/SSDM.2008.B-3-5L

2008 International Conference on Solid State Devices and Materials

[B-3-5L] Principal Guideline of Stress Design Engineering for Drivability Enhancement and Suppression of Variability in PMOSFET with SiGe S/D