The Japan Society of Applied Physics

[B-3-5L] Principal Guideline of Stress Design Engineering for Drivability Enhancement and Suppression of Variability in PMOSFET with SiGe S/D

M. Nishikawa1、N. Tamura2、Y. Shimamune2、A. Hatada1、K. Ikeda2、T. Yamamoto2、T. Miyashita2、Y. S. Kim2、T. Kubo1、T. Sukegawa1、M. Fukuda1、K. Sukegawa2、H. Kurata2、M. Kase1、K. Hashimoto1 (1.Fujitsu Microelectronics Ltd.、2.Fujitsu Labs. Ltd., Japan)

https://doi.org/10.7567/SSDM.2008.B-3-5L