High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO<sub>2</sub> High-k Dielectric and Metal Gate

J. Oh; P. Majhi; C. Y. Kang; R. Jammy; R. Joe; T. Sugawara; Y. Akasaka; T. Kaitsuka; T. Arikado; M. Tomoyasu

doi:https://doi.org/10.7567/SSDM.2008.B-6-1

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-6-1] High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO₂ High-k Dielectric and Metal Gate

J. Oh¹, P. Majhi¹, C. Y. Kang¹, R. Jammy¹, R. Joe², T. Sugawara², Y. Akasaka², T. Kaitsuka², T. Arikado², M. Tomoyasu² (1.SEMATECH, USA, 2.Tokyo Electron Ltd., Japan)

https://doi.org/10.7567/SSDM.2008.B-6-1

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2008 International Conference on Solid State Devices and Materials

[B-6-1] High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO2 High-k Dielectric and Metal Gate

[B-6-1] High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO₂ High-k Dielectric and Metal Gate