High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO<sub>2</sub> High-k Dielectric and Metal Gate

J. Oh; P. Majhi; C. Y. Kang; R. Jammy; R. Joe; T. Sugawara; Y. Akasaka; T. Kaitsuka; T. Arikado; M. Tomoyasu

doi:https://doi.org/10.7567/SSDM.2008.B-6-1

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-6-1] High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO₂ High-k Dielectric and Metal Gate

J. Oh¹、P. Majhi¹、C. Y. Kang¹、R. Jammy¹、R. Joe²、T. Sugawara²、Y. Akasaka²、T. Kaitsuka²、T. Arikado²、M. Tomoyasu² (1.SEMATECH, USA、2.Tokyo Electron Ltd., Japan)

https://doi.org/10.7567/SSDM.2008.B-6-1

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2008 International Conference on Solid State Devices and Materials

[B-6-1] High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO2 High-k Dielectric and Metal Gate

[B-6-1] High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO₂ High-k Dielectric and Metal Gate