[B-8-1] Simulation of Material and Strain Engineering of Tunneling Field-Effect Transistor with Subthreshold Swing below 60mV/decade (Invited)

G. Samudra¹、Y. C. Yeo¹、C. H. Heng¹、E. H. Toh¹、L. Yang¹ (1.National Univ. of Singapore, Singapore)

https://doi.org/10.7567/SSDM.2008.B-8-1