Understanding the Effect of Laser Anneal on LSTP 45nm Node MOS Transistor Electrical Parameters

A. Cros; S. Renard; M. Bidaud; R. Ranica; G. Ribes; E. Josse; B. Dumont; R. Beneyton; K. Barla; M. Haond; H. Brut

doi:https://doi.org/10.7567/SSDM.2008.B-8-2

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-8-2] Understanding the Effect of Laser Anneal on LSTP 45nm Node MOS Transistor Electrical Parameters

A. Cros¹, S. Renard¹, M. Bidaud¹, R. Ranica¹, G. Ribes¹, E. Josse¹, B. Dumont¹, R. Beneyton¹, K. Barla¹, M. Haond¹, H. Brut¹ (1.STMicroelectronics, France)

https://doi.org/10.7567/SSDM.2008.B-8-2

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