N-Channel MOSFETs with Embedded Silicon-Carbon Source/Drain Stressors Formed using Novel Cluster-Carbon Implant and Excimer Laser-Induced Solid Phase Epitaxy

S. M. Koh; K. Sekar; W. Krull; X. Wang; G. Samudra; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2008.B-8-3

[B-8-3] N-Channel MOSFETs with Embedded Silicon-Carbon Source/Drain Stressors Formed using Novel Cluster-Carbon Implant and Excimer Laser-Induced Solid Phase Epitaxy

S. M. Koh¹, K. Sekar², W. Krull², X. Wang³, G. Samudra¹, Y. C. Yeo¹ (1.National Univ. of Singapore, Singapore, 2.SemEquip Inc., USA, 3.Singapore Inst. of Manufacturing Tech., Singapore)

https://doi.org/10.7567/SSDM.2008.B-8-3

2008 International Conference on Solid State Devices and Materials

[B-8-3] N-Channel MOSFETs with Embedded Silicon-Carbon Source/Drain Stressors Formed using Novel Cluster-Carbon Implant and Excimer Laser-Induced Solid Phase Epitaxy