N-Channel MOSFETs with Embedded Silicon-Carbon Source/Drain Stressors Formed using Novel Cluster-Carbon Implant and Excimer Laser-Induced Solid Phase Epitaxy

S. M. Koh; K. Sekar; W. Krull; X. Wang; G. Samudra; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2008.B-8-3

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-8-3] N-Channel MOSFETs with Embedded Silicon-Carbon Source/Drain Stressors Formed using Novel Cluster-Carbon Implant and Excimer Laser-Induced Solid Phase Epitaxy

S. M. Koh¹、K. Sekar²、W. Krull²、X. Wang³、G. Samudra¹、Y. C. Yeo¹ (1.National Univ. of Singapore, Singapore、2.SemEquip Inc., USA、3.Singapore Inst. of Manufacturing Tech., Singapore)

https://doi.org/10.7567/SSDM.2008.B-8-3

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