A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si(110) using Accumulation Mode Device Structure for RF Analog Circuits

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

W. Cheng¹、A. Teramoto¹、C. Tye¹、R. Kuroda¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ., Japan)