Comparison of Plasma Doping with Implant for High Performance SOI CMOS Fabrication

K. L. Lee; I. Lauer; J. Li; P. Porshnev; P. Ronsheim; J. Gardner; P. Kozlowski; K. Santhanam; M. Foad; D. G. Park

doi:https://doi.org/10.7567/SSDM.2008.B-9-2

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-9-2] Comparison of Plasma Doping with Implant for High Performance SOI CMOS Fabrication

K. L. Lee¹、I. Lauer¹、J. Li¹、P. Porshnev²、P. Ronsheim¹、J. Gardner¹、P. Kozlowski¹、K. Santhanam²、M. Foad²、D. G. Park¹ (1.IBM、2.Applied Materials Inc., USA)

https://doi.org/10.7567/SSDM.2008.B-9-2

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