Evaluation of Threshold-Voltage Variation in Silicon on Thin BOX (SOTB) CMOS and its Impact on Decreasing Standby Leakage Current

N. Sugii; R. Tsuchiya; T. Ishigaki; Y. Morita; H. Yoshimoto; T. Iwamatsu; H. Oda; Y. Inoue; T. Hiramoto; S. Kimura

doi:https://doi.org/10.7567/SSDM.2008.B-9-3

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-9-3] Evaluation of Threshold-Voltage Variation in Silicon on Thin BOX (SOTB) CMOS and its Impact on Decreasing Standby Leakage Current

N. Sugii¹, R. Tsuchiya¹, T. Ishigaki¹, Y. Morita¹, H. Yoshimoto¹, T. Iwamatsu², H. Oda², Y. Inoue², T. Hiramoto³, S. Kimura¹ (1.Hitachi, Ltd., 2.Renesas Tech. Corp., 3.Univ. of Tokyo, Japan)

https://doi.org/10.7567/SSDM.2008.B-9-3

▲