The Japan Society of Applied Physics

[B-9-3] Evaluation of Threshold-Voltage Variation in Silicon on Thin BOX (SOTB) CMOS and its Impact on Decreasing Standby Leakage Current

N. Sugii1、R. Tsuchiya1、T. Ishigaki1、Y. Morita1、H. Yoshimoto1、T. Iwamatsu2、H. Oda2、Y. Inoue2、T. Hiramoto3、S. Kimura1 (1.Hitachi, Ltd.、2.Renesas Tech. Corp.、3.Univ. of Tokyo, Japan)

https://doi.org/10.7567/SSDM.2008.B-9-3