Evaluation of Threshold-Voltage Variation in Silicon on Thin BOX (SOTB) CMOS and its Impact on Decreasing Standby Leakage Current

N. Sugii; R. Tsuchiya; T. Ishigaki; Y. Morita; H. Yoshimoto; T. Iwamatsu; H. Oda; Y. Inoue; T. Hiramoto; S. Kimura

doi:https://doi.org/10.7567/SSDM.2008.B-9-3

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-9-3] Evaluation of Threshold-Voltage Variation in Silicon on Thin BOX (SOTB) CMOS and its Impact on Decreasing Standby Leakage Current

N. Sugii¹、R. Tsuchiya¹、T. Ishigaki¹、Y. Morita¹、H. Yoshimoto¹、T. Iwamatsu²、H. Oda²、Y. Inoue²、T. Hiramoto³、S. Kimura¹ (1.Hitachi, Ltd.、2.Renesas Tech. Corp.、3.Univ. of Tokyo, Japan)

https://doi.org/10.7567/SSDM.2008.B-9-3

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