[C-2-1] Low Temperature Processes using Ni-induced Crystallization Technique for Monolithic Three Dimensional Integration

J. H. Park¹、M. Tada^1,2、H. Peng¹、K. C. Saraswat¹ (1.Stanford Univ., USA、2.NEC Corp., Japan)

https://doi.org/10.7567/SSDM.2008.C-2-1