[C-2-3] A Novel Gate Electrode Structure for Reduction of Gate Resistance of sub-0.1μm RF/mixed-signal MOSFETs

H. Nagase¹、A. Tanabe¹、K. Umeda¹、T. Watanabe¹、Y. Hayashi¹ (1.NEC Electronics Corp., Japan)

https://doi.org/10.7567/SSDM.2008.C-2-3