The Japan Society of Applied Physics

[D-6-1] Modeling of High-Voltage MOSFETs for Device/Circuit Optimization (Invited)

M. Miura-Mattausch1、M. Yokomichi1、N. Sadachika1、Y. Oritsuki1、T. Sakuda1、M. Miyake1、T. Kajiwara1、H. Kikuchihara1、U. Feldmann1、H. J. Mattausch1 (1.Hiroshima Univ., Japan)

https://doi.org/10.7567/SSDM.2008.D-6-1