The Japan Society of Applied Physics

[D-6-1] Modeling of High-Voltage MOSFETs for Device/Circuit Optimization (Invited)

M. Miura-Mattausch1, M. Yokomichi1, N. Sadachika1, Y. Oritsuki1, T. Sakuda1, M. Miyake1, T. Kajiwara1, H. Kikuchihara1, U. Feldmann1, H. J. Mattausch1 (1.Hiroshima Univ., Japan)

https://doi.org/10.7567/SSDM.2008.D-6-1