[E-7-4] Tapered Through-Si Via Formation for Optical Interposer with 3D ICs and Buried Vertical-Cavity Surface-Emitting Laser / Photo Diode Chips

M. Fujiwara^1,2、A. Noriki²、T. Fukushima²、T. Tanaka²、M. Koyanagi² (1.Sumitomo Bakelite Co., Ltd.、2.Tohoku Univ., Japan)

https://doi.org/10.7567/SSDM.2008.E-7-4