[G-2-5] Lateral Buried Growth of N⁺-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET

T. Kanazawa¹、H. Saito¹、K. Wakabayashi¹、Y. Miyamoto¹、K. Furuya¹ (1.Tokyo Tech., Japan)

https://doi.org/10.7567/SSDM.2008.G-2-5