[G-3-5] Low-Capacitance Low-Voltage Transient Voltage Suppression Circuit by Diode Activated SiGe HBT in SiGe HBT BiCMOS Process

S. H. Dai¹、J. J. Peng¹、C. C. Chen¹、C. J. Lin¹、Y. C. King¹ (1.National Tsing Hua Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.G-3-5