Failure Mechanisms of GaN-Based Transistors in On-and Off- State (Invited)

E. Zanoni; G. Meneghesso; C. Dua; M. Peroni; M. Uren

doi:https://doi.org/10.7567/SSDM.2008.G-6-1

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-6-1] Failure Mechanisms of GaN-Based Transistors in On-and Off- State (Invited)

E. Zanoni¹、G. Meneghesso¹、C. Dua²、M. Peroni³、M. Uren⁴ (1.Univ. of Padova, Italy、2.Alcatel-Thales III-V Lab., France、3.Selex SI, Italy、4.QinetiQ Ltd., UK)

https://doi.org/10.7567/SSDM.2008.G-6-1

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