[G-7-6L] Electrical Properties of 4H-SiC CMOS with Wet Processed Gate Oxide

M. Okamoto¹、T. Yatsuo¹、K. Fukuda¹、H. Okumura¹ (1.AIST, Japan)

https://doi.org/10.7567/SSDM.2008.G-7-6L