[G-7-6L] Electrical Properties of 4H-SiC CMOS with Wet Processed Gate Oxide

M. Okamoto¹, T. Yatsuo¹, K. Fukuda¹, H. Okumura¹ (1.AIST, Japan)

https://doi.org/10.7567/SSDM.2008.G-7-6L