Threshold Voltage Shift in Ga2O3-In2O3-ZnO (GIZO) Thin Film Transistors under Constant Voltage Stress

M. Fujii; H. Yano; T. Hatayama; Y. Uraoka; T. Fuyuki; J. S. Jung; J. Y. Kwon; T. Nakanishi; M. Kimura

doi:https://doi.org/10.7567/SSDM.2008.G-8-1

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-8-1] Threshold Voltage Shift in Ga₂O₃-In₂O₃-ZnO (GIZO) Thin Film Transistors under Constant Voltage Stress

M. Fujii¹、H. Yano¹、T. Hatayama¹、Y. Uraoka¹、T. Fuyuki¹、J. S. Jung²、J. Y. Kwon²、T. Nakanishi³、M. Kimura³ (1.NAIST, Japan、2.Sumsung Advanced Inst. of Tech., Korea、3.Ryukoku Univ., Japan)

https://doi.org/10.7567/SSDM.2008.G-8-1

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2008 International Conference on Solid State Devices and Materials

[G-8-1] Threshold Voltage Shift in Ga2O3-In2O3-ZnO (GIZO) Thin Film Transistors under Constant Voltage Stress

[G-8-1] Threshold Voltage Shift in Ga₂O₃-In₂O₃-ZnO (GIZO) Thin Film Transistors under Constant Voltage Stress