Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interfacial Self-cleaning Mechanism in Atomic Layer Deposited HfO<sub>2</sub> on InGaAs and InAlAs

M. Kobayashi; P. T. Chen; S. Sun; N. Goel; M. Garner; W. Tsai; P. Pianetta; Y. Nishi

doi:https://doi.org/10.7567/SSDM.2008.G-9-2

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-9-2] Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interfacial Self-cleaning Mechanism in Atomic Layer Deposited HfO₂ on InGaAs and InAlAs

M. Kobayashi¹, P. T. Chen¹, S. Sun², N. Goel³, M. Garner³, W. Tsai³, P. Pianetta², Y. Nishi¹ (1.Stanford Univ., 2.Stanford Synchrotron Radiation Lab., 3.Intel Corp., USA)

https://doi.org/10.7567/SSDM.2008.G-9-2

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2008 International Conference on Solid State Devices and Materials

[G-9-2] Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interfacial Self-cleaning Mechanism in Atomic Layer Deposited HfO2 on InGaAs and InAlAs

[G-9-2] Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interfacial Self-cleaning Mechanism in Atomic Layer Deposited HfO₂ on InGaAs and InAlAs