Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interfacial Self-cleaning Mechanism in Atomic Layer Deposited HfO<sub>2</sub> on InGaAs and InAlAs

M. Kobayashi; P. T. Chen; S. Sun; N. Goel; M. Garner; W. Tsai; P. Pianetta; Y. Nishi

doi:https://doi.org/10.7567/SSDM.2008.G-9-2

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-9-2] Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interfacial Self-cleaning Mechanism in Atomic Layer Deposited HfO₂ on InGaAs and InAlAs

M. Kobayashi¹、P. T. Chen¹、S. Sun²、N. Goel³、M. Garner³、W. Tsai³、P. Pianetta²、Y. Nishi¹ (1.Stanford Univ.、2.Stanford Synchrotron Radiation Lab.、3.Intel Corp., USA)

https://doi.org/10.7567/SSDM.2008.G-9-2

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2008 International Conference on Solid State Devices and Materials

[G-9-2] Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interfacial Self-cleaning Mechanism in Atomic Layer Deposited HfO2 on InGaAs and InAlAs

[G-9-2] Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interfacial Self-cleaning Mechanism in Atomic Layer Deposited HfO₂ on InGaAs and InAlAs