Realizing High Quality Metal-Gate/High-Permittivity Dielectric Stack on Indium Gallium Arsenide by Vacuum Annealing and Silane Treatment

H. C. Chin; B. Wang; P. C. Lim; L. J. Tang; C. H. Tung; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2008.G-9-3

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-9-3] Realizing High Quality Metal-Gate/High-Permittivity Dielectric Stack on Indium Gallium Arsenide by Vacuum Annealing and Silane Treatment

H. C. Chin¹、B. Wang²、P. C. Lim²、L. J. Tang³、C. H. Tung³、Y. C. Yeo¹ (1.National Univ. of Singapore、2.Inst. of Materials Res. and Eng.、3.Inst. of Microelectronics, Singapore)

https://doi.org/10.7567/SSDM.2008.G-9-3

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