Realizing High Quality Metal-Gate/High-Permittivity Dielectric Stack on Indium Gallium Arsenide by Vacuum Annealing and Silane Treatment

H. C. Chin; B. Wang; P. C. Lim; L. J. Tang; C. H. Tung; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2008.G-9-3

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-9-3] Realizing High Quality Metal-Gate/High-Permittivity Dielectric Stack on Indium Gallium Arsenide by Vacuum Annealing and Silane Treatment

H. C. Chin¹, B. Wang², P. C. Lim², L. J. Tang³, C. H. Tung³, Y. C. Yeo¹ (1.National Univ. of Singapore, 2.Inst. of Materials Res. and Eng., 3.Inst. of Microelectronics, Singapore)

https://doi.org/10.7567/SSDM.2008.G-9-3

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