The Japan Society of Applied Physics

[G-9-3] Realizing High Quality Metal-Gate/High-Permittivity Dielectric Stack on Indium Gallium Arsenide by Vacuum Annealing and Silane Treatment

H. C. Chin1、B. Wang2、P. C. Lim2、L. J. Tang3、C. H. Tung3、Y. C. Yeo1 (1.National Univ. of Singapore、2.Inst. of Materials Res. and Eng.、3.Inst. of Microelectronics, Singapore)

https://doi.org/10.7567/SSDM.2008.G-9-3