[G-9-4] Fabrication of III-V MOS Structure by using Selective Oxidation of InAlAs

S. Nakagawa¹, M. Yokoyama¹, O. Ichikawa², M. Hata², M. Tanaka¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.Sumitomo Chemical Co., Ltd.)

https://doi.org/10.7567/SSDM.2008.G-9-4