[G-9-4] Fabrication of III-V MOS Structure by using Selective Oxidation of InAlAs

S. Nakagawa¹、M. Yokoyama¹、O. Ichikawa²、M. Hata²、M. Tanaka¹、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.Sumitomo Chemical Co., Ltd.)

https://doi.org/10.7567/SSDM.2008.G-9-4