[G-9-5] Improved Electrical Characteristics of Atomic-layer-deposited Al₂O₃/GaAs MOS Capacitors with (NH₄)₂S-C₄H₉OH Sulfide Treatment

H. C. Chiang¹, C. H. Chien^1,2, C. C. Cheng¹, C. L. Lin¹, C. S. Chen¹, G. L. Luo², Y. L. Shen², C. C. Kei³, C. N. Hsiao³ (1.National Chiao Tung Univ., 2.National Nano Device Lab., 3.National Applied Res. Lab., Taiwan)

https://doi.org/10.7567/SSDM.2008.G-9-5