Improved Electrical Characteristics of Atomic-layer-deposited Al2O3/GaAs MOS Capacitors with (NH4)2S-C4H9OH Sulfide Treatment

H. C. Chiang; C. H. Chien; C. C. Cheng; C. L. Lin; C. S. Chen; G. L. Luo; Y. L. Shen; C. C. Kei; C. N. Hsiao

doi:https://doi.org/10.7567/SSDM.2008.G-9-5

[G-9-5] Improved Electrical Characteristics of Atomic-layer-deposited Al₂O₃/GaAs MOS Capacitors with (NH₄)₂S-C₄H₉OH Sulfide Treatment

H. C. Chiang¹、C. H. Chien^1,2、C. C. Cheng¹、C. L. Lin¹、C. S. Chen¹、G. L. Luo²、Y. L. Shen²、C. C. Kei³、C. N. Hsiao³ (1.National Chiao Tung Univ.、2.National Nano Device Lab.、3.National Applied Res. Lab., Taiwan)

https://doi.org/10.7567/SSDM.2008.G-9-5

2008 International Conference on Solid State Devices and Materials

[G-9-5] Improved Electrical Characteristics of Atomic-layer-deposited Al2O3/GaAs MOS Capacitors with (NH4)2S-C4H9OH Sulfide Treatment

[G-9-5] Improved Electrical Characteristics of Atomic-layer-deposited Al₂O₃/GaAs MOS Capacitors with (NH₄)₂S-C₄H₉OH Sulfide Treatment