[G-9-6] GaAs MOS Diodes with the Gate Oxide Formed by PEC Method

H. Y. Lee¹、Y. F. Lin²、L. R. Lou¹ (1.National Cheng Kung Univ.、2.National Formosa Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.G-9-6