[G-9-6] GaAs MOS Diodes with the Gate Oxide Formed by PEC Method

H. Y. Lee¹, Y. F. Lin², L. R. Lou¹ (1.National Cheng Kung Univ., 2.National Formosa Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.G-9-6