[H-1-1] Nanowire Impact Ionization Transistors (I-FETs) (Invited)

Y. C. Yeo¹、G. Samudra¹、C. H. Heng¹、E. H. Toh¹、C. Shen¹ (1.National Univ. of Singapore, Singapore)

https://doi.org/10.7567/SSDM.2008.H-1-1