[H-1-4] Novel F-shaped Triple Gate Structure for Improvement of Hot Carrier Reliability in Low Temperature Poly-Si TFT

S. H. Choi¹、H. S. Shin¹、S. G. Park¹、M. K. Han¹ (1.Seoul National Univ., Korea)

https://doi.org/10.7567/SSDM.2008.H-1-4