[H-1-5] Floating Gate Memory based on Ferritin Nanodots with High-k Gate Dielectrics

K. Ohara¹, Y. Uraoka¹, T. Fuyuki¹, I. Yamashita¹, T. Yaegashi², M. Moniwa², M. Yoshimaru² (1.NAIST, 2.STARC, Japan)

https://doi.org/10.7567/SSDM.2008.H-1-5