[H-1-5] Floating Gate Memory based on Ferritin Nanodots with High-k Gate Dielectrics

K. Ohara¹、Y. Uraoka¹、T. Fuyuki¹、I. Yamashita¹、T. Yaegashi²、M. Moniwa²、M. Yoshimaru² (1.NAIST、2.STARC, Japan)

https://doi.org/10.7567/SSDM.2008.H-1-5