Silicon based Technology for Single Dopant Orbital Transistor

R. Wacquez; M. Sanquer; M. Vinet; X. Jehl; M. Pierre; S. Pauliac-Vaujour; G. Molas; T. Poiroux; G. Guegan; S. Deleonibus; D. Kern

doi:https://doi.org/10.7567/SSDM.2008.H-8-4

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[H-8-4] Silicon based Technology for Single Dopant Orbital Transistor

R. Wacquez^1,2、M. Sanquer¹、M. Vinet²、X. Jehl¹、M. Pierre¹、S. Pauliac-Vaujour²、G. Molas²、T. Poiroux²、G. Guegan²、S. Deleonibus²、D. Kern³ (1.CEA-INAC、2.CEA-LETI/MINATEC, France、3.Tübingen Univ., Germany)

https://doi.org/10.7567/SSDM.2008.H-8-4

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