Silicon based Technology for Single Dopant Orbital Transistor

R. Wacquez; M. Sanquer; M. Vinet; X. Jehl; M. Pierre; S. Pauliac-Vaujour; G. Molas; T. Poiroux; G. Guegan; S. Deleonibus; D. Kern

doi:https://doi.org/10.7567/SSDM.2008.H-8-4

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[H-8-4] Silicon based Technology for Single Dopant Orbital Transistor

R. Wacquez^1,2, M. Sanquer¹, M. Vinet², X. Jehl¹, M. Pierre¹, S. Pauliac-Vaujour², G. Molas², T. Poiroux², G. Guegan², S. Deleonibus², D. Kern³ (1.CEA-INAC, 2.CEA-LETI/MINATEC, France, 3.Tübingen Univ., Germany)

https://doi.org/10.7567/SSDM.2008.H-8-4

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