1TBulk eDRAM using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power Applications

S. Puget; G. Bossu; F. Berthollet; P. Mazoyer; J. M. Portal; P. Masson; R. Bouchakour; T. Skotnicki

doi:https://doi.org/10.7567/SSDM.2008.J-1-2

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[J-1-2] 1TBulk eDRAM using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power Applications

S. Puget^1,2、G. Bossu^1,2、F. Berthollet^1,3、P. Mazoyer¹、J. M. Portal²、P. Masson⁴、R. Bouchakour²、T. Skotnicki¹ (1.STMicroelectronics、2.IM2NP、3.INL-INSA Lyon、4.LEAT, France)

https://doi.org/10.7567/SSDM.2008.J-1-2

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