[J-1-4] A Novel Multi-Fin DRAM Periphery Transistor Technology using a Spacer Transfer through Gate Polysilicon Technique

M. Yoshida¹、K. Kim¹、J. Kahng¹、C. Lee¹、H. Sung¹、K. H. Jung¹、J. S. Moon¹、W. Yang¹、K. S. Oh¹ (1.Samsung Electronics Co., Ltd., Korea)

https://doi.org/10.7567/SSDM.2008.J-1-4