A Novel Multi-Fin DRAM Periphery Transistor Technology using a Spacer Transfer through Gate Polysilicon Technique

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

M. Yoshida¹, K. Kim¹, J. Kahng¹, C. Lee¹, H. Sung¹, K. H. Jung¹, J. S. Moon¹, W. Yang¹, K. S. Oh¹ (1.Samsung Electronics Co., Ltd., Korea)