Improving Read Disturb Characteristics by Self-boosting Read Scheme for MLC NAND Flash Memories

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

M. Kang¹、K. T. Park¹、D. Kim¹、S. Hwang¹、B. Y. Choi¹、Y. Song²、Y. T. Lee¹、C. Kim¹ (1.Samsung Electronics Co., Ltd.、2.Hanyang Univ., Korea)