Improving Read Disturb Characteristics by Self-boosting Read Scheme for MLC NAND Flash Memories

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

M. Kang¹, K. T. Park¹, D. Kim¹, S. Hwang¹, B. Y. Choi¹, Y. Song², Y. T. Lee¹, C. Kim¹ (1.Samsung Electronics Co., Ltd., 2.Hanyang Univ., Korea)