[J-2-5] Memory Characterization of MOS Memory Device with High Density Self-Assembled Tungsten Nanodots Floating Gate and HfO₂ Blocking Dielectric

Y. Pei¹、M. Nishijima¹、T. Fukushima¹、T. Tanaka¹、M. Koyanagi¹ (1.Tohoku Univ., Japan)

https://doi.org/10.7567/SSDM.2008.J-2-5