[J-5-3] Multi-Gate Metal Nano-crystal Memories with TiN Nano-crystals, High-k Blocking Dielectric and High Work Function Gate Electrode

C. P. Lu¹、C. K. Luo¹、B. Y. Tsui¹、C. H. Lin²、P. J. Tzeng²、C. C. Wang²、M. J. Tsai² (1.National Chiao Tung Univ.、2.Industrial Tech. Res. Inst., Taiwan)

https://doi.org/10.7567/SSDM.2008.J-5-3